Non-volatile 3D stacking RRAM-based FPGA

We demonstrates a novel Field-Programmable Gate Array (FPGA) structure based on Resistive Random Access Memory (RRAM) system. RRAM is a non-volatile memory device which is compatible to CMOS Back End of Line (BEOL) process with only 4F2 area per cell. We use a 1R system memory for logic element, Loo...

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Bibliographic Details
Main Authors: Chen, Yi-Chung, Wang, Wenhua, Li, Hai, Zhang, Wei
Other Authors: School of Computer Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/96987
http://hdl.handle.net/10220/13024
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Institution: Nanyang Technological University
Language: English