The 3-D stacking bipolar RRAM for high density
For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Co...
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Main Authors: | , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/98692 http://hdl.handle.net/10220/16470 |
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Institution: | Nanyang Technological University |
Language: | English |