The 3-D stacking bipolar RRAM for high density

• Main Authors: Chen, Yi-Chung, Li, Helen Hai, Zhang, Wei, Pino, Robinson E.
• Other Authors: School of Computer Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Computer science and engineering
• Online Access: https://hdl.handle.net/10356/98692; http://hdl.handle.net/10220/16470
• Institution: Nanyang Technological University

For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Co...