The 3-D stacking bipolar RRAM for high density

For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Co...

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Main Authors: Chen, Yi-Chung, Li, Helen Hai, Zhang, Wei, Pino, Robinson E.
Other Authors: School of Computer Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/98692
http://hdl.handle.net/10220/16470
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-986922020-05-28T07:17:15Z The 3-D stacking bipolar RRAM for high density Chen, Yi-Chung Li, Helen Hai Zhang, Wei Pino, Robinson E. School of Computer Engineering DRNTU::Engineering::Computer science and engineering For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Conventionally, multiple bipolar RRAM layers are piled up vertically separated with isolation material to prevent signal interference between the adjacent memory layers. The process of the isolation material increases the fabrication cost and brings in the potential reliability issue. To alleviate the situation, we introduce two novel 3-D stacking structures built upon bipolar RRAM crossbars that eliminate the isolation layers. The bigroup operation scheme dedicated for the proposed designs to enable multilayer accesses while avoiding the overwriting induced by the cross-layer disturbance is also presented. Our simulation results show that the proposed designs can increase the capacity of a memory island to 8K-bits (i.e., eight layers of 32 × 32 crossbar arrays) while maintaining the sense margin in the worst case configuration greater than 20% of the maximal sensing voltage. 2013-10-14T04:40:11Z 2019-12-06T19:58:32Z 2013-10-14T04:40:11Z 2019-12-06T19:58:32Z 2012 2012 Journal Article Chen, Y. C., Li, H. H., Zhang, W., & Pino, R. E. (2012). The 3-D stacking bipolar RRAM for high density. IEEE transactions on nanotechnology, 11(5), 948-956. https://hdl.handle.net/10356/98692 http://hdl.handle.net/10220/16470 10.1109/TNANO.2012.2208759 en IEEE transactions on nanotechnology
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Computer science and engineering
spellingShingle DRNTU::Engineering::Computer science and engineering
Chen, Yi-Chung
Li, Helen Hai
Zhang, Wei
Pino, Robinson E.
The 3-D stacking bipolar RRAM for high density
description For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Conventionally, multiple bipolar RRAM layers are piled up vertically separated with isolation material to prevent signal interference between the adjacent memory layers. The process of the isolation material increases the fabrication cost and brings in the potential reliability issue. To alleviate the situation, we introduce two novel 3-D stacking structures built upon bipolar RRAM crossbars that eliminate the isolation layers. The bigroup operation scheme dedicated for the proposed designs to enable multilayer accesses while avoiding the overwriting induced by the cross-layer disturbance is also presented. Our simulation results show that the proposed designs can increase the capacity of a memory island to 8K-bits (i.e., eight layers of 32 × 32 crossbar arrays) while maintaining the sense margin in the worst case configuration greater than 20% of the maximal sensing voltage.
author2 School of Computer Engineering
author_facet School of Computer Engineering
Chen, Yi-Chung
Li, Helen Hai
Zhang, Wei
Pino, Robinson E.
format Article
author Chen, Yi-Chung
Li, Helen Hai
Zhang, Wei
Pino, Robinson E.
author_sort Chen, Yi-Chung
title The 3-D stacking bipolar RRAM for high density
title_short The 3-D stacking bipolar RRAM for high density
title_full The 3-D stacking bipolar RRAM for high density
title_fullStr The 3-D stacking bipolar RRAM for high density
title_full_unstemmed The 3-D stacking bipolar RRAM for high density
title_sort 3-d stacking bipolar rram for high density
publishDate 2013
url https://hdl.handle.net/10356/98692
http://hdl.handle.net/10220/16470
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