A large-size HfO₂ based RRAM structure suitable for integration of one RRAM with one InGaZnO thin film transistor for large-area applications

• المؤلفون الرئيسيون: Li, Yuanbo, Zhang, Jun, Sun, Jianxun, Chen, Tupei
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Aluminum Oxide; Electrodes
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/160769

This work aims at finding a HfO2-based resistive random-access memory (RRAM) structure suitable for the integration of one RRAM with one InGaZnO thin film transistor (TFT) for large-area applications such as flexible electronic circuits. One of the major concerns is that the compliance current (CC)...