A large-size HfO₂ based RRAM structure suitable for integration of one RRAM with one InGaZnO thin film transistor for large-area applications

A large-size HfO₂ based RRAM structure suitable for integration of one RRAM with one InGaZnO thin film transistor for large-area applications

This work aims at finding a HfO2-based resistive random-access memory (RRAM) structure suitable for the integration of one RRAM with one InGaZnO thin film transistor (TFT) for large-area applications such as flexible electronic circuits. One of the major concerns is that the compliance current (CC)...

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Bibliographic Details
Main Authors: Li, Yuanbo, Zhang, Jun, Sun, Jianxun, Chen, Tupei
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Aluminum Oxide
Electrodes
Online Access:https://hdl.handle.net/10356/160769
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/160769

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