A large-size HfO₂ based RRAM structure suitable for integration of one RRAM with one InGaZnO thin film transistor for large-area applications
This work aims at finding a HfO2-based resistive random-access memory (RRAM) structure suitable for the integration of one RRAM with one InGaZnO thin film transistor (TFT) for large-area applications such as flexible electronic circuits. One of the major concerns is that the compliance current (CC)...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/160769 |
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| Institution: | Nanyang Technological University |
| Language: | English |