Improved electrical performance and thermal stability of HfO2 / Al2 O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS-HFETs
10.1149/1.3353799
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82505 |
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| Institution: | National University of Singapore |