Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsy...

Full description

Saved in:
Bibliographic Details
Main Authors: Li, Yuanbo, Chen, Tupei, Ju, Xin, Salim, Teddy
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Engineering::Materials
Brain
Gate Dielectrics
Online Access:https://hdl.handle.net/10356/164997
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/164997

Similar Items