Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

• Main Authors: Li, Yuanbo, Chen, Tupei, Ju, Xin, Salim, Teddy
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; Engineering::Materials; Brain; Gate Dielectrics
• Online Access: https://hdl.handle.net/10356/164997
• Institution: Nanyang Technological University

A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsy...