Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsy...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/164997 |
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| Institution: | Nanyang Technological University |
| Language: | English |