Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsy...

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Main Authors: Li, Yuanbo, Chen, Tupei, Ju, Xin, Salim, Teddy
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Engineering::Materials
Brain
Gate Dielectrics
Online Access:https://hdl.handle.net/10356/164997
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1649972023-03-10T15:40:19Z Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric Li, Yuanbo Chen, Tupei Ju, Xin Salim, Teddy School of Electrical and Electronic Engineering School of Materials Science and Engineering Engineering::Electrical and electronic engineering Engineering::Materials Brain Gate Dielectrics A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsynaptic current, short-term memory plasticity, short-term memory to long-term memory transition, and potentiation and depression) under voltage pulse stimulus. In addition, the TFT shows high responsivity to illumination of light with various wavelengths (ultraviolet and visible light). Synaptic behaviors in response to light pulse stimuli, which could be employed in vision-based neuromorphic applications, are demonstrated. Large conductance change (Gmax/Gmin > 10) and ultra-low non-linearity (α < 0.5) of the potentiation and depression can be inspired by either gate bias pulses or photoelectric pulses with short pulse widths and small amplitudes. Ministry of Education (MOE) Published version The research of the project was supported by the Ministry of Education, Singapore, under grant AcRF TIER 1-2020-T1-002- 008 (RG144/20). 2023-03-08T07:24:32Z 2023-03-08T07:24:32Z 2022 Journal Article Li, Y., Chen, T., Ju, X. & Salim, T. (2022). Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric. Nanoscale, 14(28), 10245-10254. https://dx.doi.org/10.1039/D2NR02136F 2040-3364 https://hdl.handle.net/10356/164997 10.1039/D2NR02136F 28 14 10245 10254 en 1-2020-T1-002-008 RG144/20 Nanoscale © The Royal Society of Chemistry 2022. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Engineering::Materials
Brain
Gate Dielectrics
spellingShingle Engineering::Electrical and electronic engineering
Engineering::Materials
Brain
Gate Dielectrics
Li, Yuanbo
Chen, Tupei
Ju, Xin
Salim, Teddy
Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
description A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsynaptic current, short-term memory plasticity, short-term memory to long-term memory transition, and potentiation and depression) under voltage pulse stimulus. In addition, the TFT shows high responsivity to illumination of light with various wavelengths (ultraviolet and visible light). Synaptic behaviors in response to light pulse stimuli, which could be employed in vision-based neuromorphic applications, are demonstrated. Large conductance change (Gmax/Gmin > 10) and ultra-low non-linearity (α < 0.5) of the potentiation and depression can be inspired by either gate bias pulses or photoelectric pulses with short pulse widths and small amplitudes.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Li, Yuanbo
Chen, Tupei
Ju, Xin
Salim, Teddy
format Article
author Li, Yuanbo
Chen, Tupei
Ju, Xin
Salim, Teddy
author_sort Li, Yuanbo
title Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
title_short Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
title_full Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
title_fullStr Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
title_full_unstemmed Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
title_sort transparent electronic and photoelectric synaptic transistors based on the combination of an ingazno channel and a taox gate dielectric
publishDate 2023
url https://hdl.handle.net/10356/164997
_version_ 1761781621018591232

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