Multi-valued and fuzzy logic realization using TaOx memristive devices

• Main Authors: Bhattacharjee, Debjyoti, Kim, Wonjoo, Chattopadhyay, Anupam, Waser, Rainer, Rana, Vikas
• Other Authors: School of Computer Science and Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Random Access Memory (ReRAM); Multi-valued Logic (MVL)
• Online Access: https://hdl.handle.net/10356/87587; http://hdl.handle.net/10220/45430
• Institution: Nanyang Technological University

Among emerging non-volatile storage technologies, redox-based resistive switching Random Access Memory (ReRAM) is a prominent one. The realization of Boolean logic functionalities using ReRAM adds an extra edge to this technology. Recently, 7-state ReRAM devices were used to realize ternary arithmet...