Crossbar-constrained technology mapping for ReRAM based in-memory computing
In-memory computing has gained significant attention due to the potential for dramatic improvement in speed and energy. Redox-based resistive RAMs (ReRAMs), capable of non-volatile storage and logic operations simultaneously have been used for logic-in-memory computing approaches. To this effect, we...
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| Main Authors: | , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2021
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/154461 |
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| 機構: | Nanyang Technological University |
| 語言: | English |