Multi-valued and fuzzy logic realization using TaOx memristive devices

• Main Authors: Bhattacharjee, Debjyoti, Kim, Wonjoo, Chattopadhyay, Anupam, Waser, Rainer, Rana, Vikas
• Other Authors: School of Computer Science and Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Random Access Memory (ReRAM); Multi-valued Logic (MVL)
• Online Access: https://hdl.handle.net/10356/87587; http://hdl.handle.net/10220/45430
• Institution: Nanyang Technological University

Among emerging non-volatile storage technologies, redox-based resistive switching Random Access Memory (ReRAM) is a prominent one. The realization of Boolean logic functionalities using ReRAM adds an extra edge to this technology. Recently, 7-state ReRAM devices were used to realize ternary arithmetic circuits, which opens up the computing space beyond traditional binary values. In this manuscript, we report realization of multi-valued and fuzzy logic operators with a representative application using ReRAM devices. Multi-valued logic (MVL), such as Łukasiewicz logic generalizes Boolean logic by allowing more than two truth values. MVL also permits operations on fuzzy sets, where, in contrast to standard crisp logic, an element is permitted to have a degree of membership to a given set. Fuzzy operations generally model human reasoning better than Boolean logic operations, which is predominant in current computing technologies. When the available information for the modelling of a system is imprecise and incomplete, fuzzy logic provides an excellent framework for the system design. Practical applications of fuzzy logic include, industrial control systems, robotics, and in general, design of expert systems through knowledge-based reasoning. Our experimental results show, for the first time, that it is possible to model fuzzy logic natively using multi-state memristive devices.