Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

10.1016/j.apsusc.2010.01.115

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Bibliographic Details
Main Authors: Yang, M., Deng, W.S., Chen, Q., Feng, Y.P., Wong, L.M., Chai, J.W., Pan, J.S., Wang, S.J., Ng, C.M.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Gate dielectrics
Ge-FETs
High-κ
Online Access:http://scholarbank.nus.edu.sg/handle/10635/95847
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/95847

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