Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

• Main Authors: Yang, M., Deng, W.S., Chen, Q., Feng, Y.P., Wong, L.M., Chai, J.W., Pan, J.S., Wang, S.J., Ng, C.M.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: Gate dielectrics; Ge-FETs; High-κ
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/95847
• Institution: National University of Singapore

10.1016/j.apsusc.2010.01.115