NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

10.1109/LED.2007.904210

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Bibliographic Details
Main Authors: Chen, J., Wang, X.P., Li, M.-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Erbium
High-κ dielectric
Lanthanide
Metal gate
MOS capacitor
Rare earth metal
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82766
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82766

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