NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

10.1109/LED.2007.904210

Saved in:

Bibliographic Details
Main Authors:	Chen, J., Wang, X.P., Li, M.-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Erbium High-κ dielectric Lanthanide Metal gate MOS capacitor Rare earth metal
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82766
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82766
record_format	dspace
spelling	sg-nus-scholar.10635-827662024-11-13T14:46:25Z NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric Chen, J. Wang, X.P. Li, M.-F. Lee, S.J. Yu, M.B. Shen, C. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE Erbium High-κ dielectric Lanthanide Metal gate MOS capacitor Rare earth metal 10.1109/LED.2007.904210 IEEE Electron Device Letters 28 10 862-864 EDLED 2014-10-07T04:33:15Z 2014-10-07T04:33:15Z 2007-10 Article Chen, J., Wang, X.P., Li, M.-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y.-C. (2007-10). NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric. IEEE Electron Device Letters 28 (10) : 862-864. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.904210 07413106 http://scholarbank.nus.edu.sg/handle/10635/82766 000249942100005 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Erbium High-κ dielectric Lanthanide Metal gate MOS capacitor Rare earth metal
spellingShingle	Erbium High-κ dielectric Lanthanide Metal gate MOS capacitor Rare earth metal Chen, J. Wang, X.P. Li, M.-F. Lee, S.J. Yu, M.B. Shen, C. Yeo, Y.-C. NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
description	10.1109/LED.2007.904210
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chen, J. Wang, X.P. Li, M.-F. Lee, S.J. Yu, M.B. Shen, C. Yeo, Y.-C.
format	Article
author	Chen, J. Wang, X.P. Li, M.-F. Lee, S.J. Yu, M.B. Shen, C. Yeo, Y.-C.
author_sort	Chen, J.
title	NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
title_short	NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
title_full	NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
title_fullStr	NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
title_full_unstemmed	NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
title_sort	nmos compatible work function of tan metal gate with erbium-oxide-doped hafnium oxide gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82766
_version_	1821187056364158976

NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

Similar Items