High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
10.1109/55.936352
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82454 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |