High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films

10.1109/55.936352

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Bibliographic Details
Main Authors:	Bera, L.K., Choi, W.K., Tan, C.S., Samanta, S.K., Maiti, C.K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Gate oxide integrity Oxide reliability SiGe oxide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82454
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82454
record_format	dspace
spelling	sg-nus-scholar.10635-824542023-10-25T22:05:54Z High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films Bera, L.K. Choi, W.K. Tan, C.S. Samanta, S.K. Maiti, C.K. ELECTRICAL & COMPUTER ENGINEERING Gate oxide integrity Oxide reliability SiGe oxide 10.1109/55.936352 IEEE Electron Device Letters 22 8 387-389 EDLED 2014-10-07T04:29:35Z 2014-10-07T04:29:35Z 2001-08 Article Bera, L.K., Choi, W.K., Tan, C.S., Samanta, S.K., Maiti, C.K. (2001-08). High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films. IEEE Electron Device Letters 22 (8) : 387-389. ScholarBank@NUS Repository. https://doi.org/10.1109/55.936352 07413106 http://scholarbank.nus.edu.sg/handle/10635/82454 000170050900010 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Gate oxide integrity Oxide reliability SiGe oxide
spellingShingle	Gate oxide integrity Oxide reliability SiGe oxide Bera, L.K. Choi, W.K. Tan, C.S. Samanta, S.K. Maiti, C.K. High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
description	10.1109/55.936352
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Bera, L.K. Choi, W.K. Tan, C.S. Samanta, S.K. Maiti, C.K.
format	Article
author	Bera, L.K. Choi, W.K. Tan, C.S. Samanta, S.K. Maiti, C.K.
author_sort	Bera, L.K.
title	High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
title_short	High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
title_full	High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
title_fullStr	High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
title_full_unstemmed	High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
title_sort	high quality gate dielectrics grown by rapid thermal processing using split-n 2o technique on strained-si 0.91ge 0.09 films
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82454
_version_	1781784140986712064

High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films

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