High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films

High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films

10.1109/55.936352

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Bibliographic Details
Main Authors: Bera, L.K., Choi, W.K., Tan, C.S., Samanta, S.K., Maiti, C.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate oxide integrity
Oxide reliability
SiGe oxide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82454
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Institution: National University of Singapore
Description
Summary:10.1109/55.936352

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