Thermal effects on the Raman phonon of few-layer phosphorene

Thermal effects on the Raman phonon of few-layer phosphorene

10.1063/1.4937468

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Bibliographic Details
Main Authors: Ling, Z.-P, Ang, K.-W
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Subjects:
Gate dielectrics
Hafnium
Hafnium oxides
Channel materials
Compressive strain
Crystallinities
Elevated temperature
Hafnium dioxide
High- k gate dielectrics
High-k dielectric
Out diffusion
Phonons
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183736
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/183736

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