Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells

• المؤلفون الرئيسيون: Fang, Z., Chroboczek, J. A., Ghibaudo, G., Buckley, J., De Salvo, B., Li, X., Yu, Hongyu, Kwong, Dim Lee
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99021; http://hdl.handle.net/10220/13477

In this brief, low-frequency noise (LFN) characteristics are studied in oxide-based (TiN/HfOx/Pt) resistive random access nemory cells having different dimensions. It is confirmed that, for the low resistance state (LRS), current conduction is localized without an area dependence, whereas for the hi...