Conduction mechanisms in Ti/HfOx/Pt resistive switching memory device
Conduction mechanisms of Ti/HfOx/Pt Resistive Random Access Memory (RRAM) were investigated in this work. I-V characteristics of RRAM devices were measured and Ohmic conduction was found to be the dominant conduction mechanism in low resistance state (LRS), while Schottky emission (SE) was found to...
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | |
| التنسيق: | Final Year Project |
| اللغة: | English |
| منشور في: |
Nanyang Technological University
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/138876 |
| الوسوم: |
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