Conduction mechanisms in Ti/HfOx/Pt resistive switching memory device

Conduction mechanisms of Ti/HfOx/Pt Resistive Random Access Memory (RRAM) were investigated in this work. I-V characteristics of RRAM devices were measured and Ohmic conduction was found to be the dominant conduction mechanism in low resistance state (LRS), while Schottky emission (SE) was found to...

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Bibliographic Details
Main Author: Tan, Kuan Hong
Other Authors: Lew Wen Siang
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2020
Subjects:
Online Access:https://hdl.handle.net/10356/138876
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Institution: Nanyang Technological University
Language: English