Conduction mechanisms in Ti/HfOx/Pt resistive switching memory device
Conduction mechanisms of Ti/HfOx/Pt Resistive Random Access Memory (RRAM) were investigated in this work. I-V characteristics of RRAM devices were measured and Ohmic conduction was found to be the dominant conduction mechanism in low resistance state (LRS), while Schottky emission (SE) was found to...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/138876 |
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| Institution: | Nanyang Technological University |
| Language: | English |
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