Characterization of Si-based materials for surface micromachined microbolometer applications
In this thesis, the integration of CMOS devices with Si-based microbolometer sensor on the same silicon chip was studied. Silicon based material, Poly-Si and Poly-SiGe layers were deposited as the Infra-Red (IR) sensing film as well as the CMOS gate electrode. Microbolometer test structures and CMOS...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/3967 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |