Characterization of Si-based materials for surface micromachined microbolometer applications

In this thesis, the integration of CMOS devices with Si-based microbolometer sensor on the same silicon chip was studied. Silicon based material, Poly-Si and Poly-SiGe layers were deposited as the Infra-Red (IR) sensing film as well as the CMOS gate electrode. Microbolometer test structures and CMOS...

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Bibliographic Details
Main Author: Zhang, Guowei
Other Authors: Tse, Man Siu
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3967
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Institution: Nanyang Technological University