Characterization of Si-based materials for surface micromachined microbolometer applications

Characterization of Si-based materials for surface micromachined microbolometer applications

In this thesis, the integration of CMOS devices with Si-based microbolometer sensor on the same silicon chip was studied. Silicon based material, Poly-Si and Poly-SiGe layers were deposited as the Infra-Red (IR) sensing film as well as the CMOS gate electrode. Microbolometer test structures and CMOS...

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Main Author: Zhang, Guowei
Other Authors: Tse, Man Siu
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/3967
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-39672023-07-04T15:16:02Z Characterization of Si-based materials for surface micromachined microbolometer applications Zhang, Guowei Tse, Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials In this thesis, the integration of CMOS devices with Si-based microbolometer sensor on the same silicon chip was studied. Silicon based material, Poly-Si and Poly-SiGe layers were deposited as the Infra-Red (IR) sensing film as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using separately process flows. The CMOS devices were fabricated using the 2um N-well CMOS process modified by Shallow Trench Isolation (STI) for device isolation. Master of Science (Microelectronics) 2008-09-17T09:41:24Z 2008-09-17T09:41:24Z 2003 2003 Thesis http://hdl.handle.net/10356/3967 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Zhang, Guowei
Characterization of Si-based materials for surface micromachined microbolometer applications
description In this thesis, the integration of CMOS devices with Si-based microbolometer sensor on the same silicon chip was studied. Silicon based material, Poly-Si and Poly-SiGe layers were deposited as the Infra-Red (IR) sensing film as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using separately process flows. The CMOS devices were fabricated using the 2um N-well CMOS process modified by Shallow Trench Isolation (STI) for device isolation.
author2 Tse, Man Siu
author_facet Tse, Man Siu
Zhang, Guowei
format Theses and Dissertations
author Zhang, Guowei
author_sort Zhang, Guowei
title Characterization of Si-based materials for surface micromachined microbolometer applications
title_short Characterization of Si-based materials for surface micromachined microbolometer applications
title_full Characterization of Si-based materials for surface micromachined microbolometer applications
title_fullStr Characterization of Si-based materials for surface micromachined microbolometer applications
title_full_unstemmed Characterization of Si-based materials for surface micromachined microbolometer applications
title_sort characterization of si-based materials for surface micromachined microbolometer applications
publishDate 2008
url http://hdl.handle.net/10356/3967
_version_ 1772827948887310336

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