Characterization of Si-based materials for surface micromachined microbolometer applications

Characterization of Si-based materials for surface micromachined microbolometer applications

In this thesis, the integration of CMOS devices with Si-based microbolometer sensor on the same silicon chip was studied. Silicon based material, Poly-Si and Poly-SiGe layers were deposited as the Infra-Red (IR) sensing film as well as the CMOS gate electrode. Microbolometer test structures and CMOS...

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書目詳細資料
主要作者:	Zhang, Guowei
其他作者:	Tse, Man Siu
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
在線閱讀:	http://hdl.handle.net/10356/3967
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University

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