4H-SiC wafers studied by X-ray absorption and Raman scattering

• المؤلفون الرئيسيون: Mendis, Suwan P., Xu, Qiang, Sun, Hua Yang, Chen, Cheng, Jang, Ling-Yun, E. Rusli, Tin, Chin Che, Qiu, Zhi Ren, Wu, Zhengyun, Liu, Chee Wee, Feng, Zhe Chuan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97866; http://hdl.handle.net/10220/11147

Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding...