4H-SiC wafers studied by X-ray absorption and Raman scattering

Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding...

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Main Authors:	Mendis, Suwan P., Xu, Qiang, Sun, Hua Yang, Chen, Cheng, Jang, Ling-Yun, E. Rusli, Tin, Chin Che, Qiu, Zhi Ren, Wu, Zhengyun, Liu, Chee Wee, Feng, Zhe Chuan
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:	https://hdl.handle.net/10356/97866 http://hdl.handle.net/10220/11147
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-97866
record_format	dspace
spelling	sg-ntu-dr.10356-978662020-03-07T13:24:48Z 4H-SiC wafers studied by X-ray absorption and Raman scattering Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan School of Electrical and Electronic Engineering Silicon Carbide and Related Materials (2011) DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies. 2013-07-10T09:05:01Z 2019-12-06T19:47:29Z 2013-07-10T09:05:01Z 2019-12-06T19:47:29Z 2012 2012 Conference Paper https://hdl.handle.net/10356/97866 http://hdl.handle.net/10220/11147 10.4028/www.scientific.net/MSF.717-720.509 en © 2012 Trans Tech Publications, Switzerland.
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan 4H-SiC wafers studied by X-ray absorption and Raman scattering
description	Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan
format	Conference or Workshop Item
author	Mendis, Suwan P. Xu, Qiang Sun, Hua Yang Chen, Cheng Jang, Ling-Yun E. Rusli Tin, Chin Che Qiu, Zhi Ren Wu, Zhengyun Liu, Chee Wee Feng, Zhe Chuan
author_sort	Mendis, Suwan P.
title	4H-SiC wafers studied by X-ray absorption and Raman scattering
title_short	4H-SiC wafers studied by X-ray absorption and Raman scattering
title_full	4H-SiC wafers studied by X-ray absorption and Raman scattering
title_fullStr	4H-SiC wafers studied by X-ray absorption and Raman scattering
title_full_unstemmed	4H-SiC wafers studied by X-ray absorption and Raman scattering
title_sort	4h-sic wafers studied by x-ray absorption and raman scattering
publishDate	2013
url	https://hdl.handle.net/10356/97866 http://hdl.handle.net/10220/11147
_version_	1681037368547606528

4H-SiC wafers studied by X-ray absorption and Raman scattering

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