Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides
Effect of the trapped Si ions in a 30-nm gate oxide implanted with Si+ at a very low energy (1.3 keV) on the flatband voltage after various thermal annealing has been examined. For the annealing at 700°C for 20 min, although only 0.1 per cent of the implanted Si ions remained, it can cause a flatban...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/92134 http://hdl.handle.net/10220/6405 |
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Institution: | Nanyang Technological University |
Language: | English |