Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides

• Main Authors: Chen, Q., Zhao, P., Tseng, Ampere A., Ng, Chi Yung, Chen, Tupei, Ding, Liang, Liu, Yang, Fung, Stevenson Hon Yuen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/92134; http://hdl.handle.net/10220/6405
• Institution: Nanyang Technological University

Effect of the trapped Si ions in a 30-nm gate oxide implanted with Si+ at a very low energy (1.3 keV) on the flatband voltage after various thermal annealing has been examined. For the annealing at 700°C for 20 min, although only 0.1 per cent of the implanted Si ions remained, it can cause a flatban...