Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

• Main Authors: Fu, Yong Qing, Liu, Yang, Chen, Tupei, Ding, Liang, Zhang, Sam, Fung, Stevenson Hon Yuen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering; DRNTU::Engineering::Mechanical engineering
• Online Access: https://hdl.handle.net/10356/91838; http://hdl.handle.net/10220/6404
• Institution: Nanyang Technological University

One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this wor...