Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions

• Main Authors: Ye, J. D., Ding, Liang, Liu, Yang, Wong, Jen It, Fung, Stevenson Hon Yuen, Cen, Zhan Hong, Chen, Tupei, Liu, Zhen, Yang, Ming
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/91848; http://hdl.handle.net/10220/6422
• Institution: Nanyang Technological University

The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ~680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitatio...