Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

by Ng, Chi Yung, Chen, Tupei, Zhao, P., Ding, Liang, Liu, Yang, Tseng, Ampere A., Fung, Stevenson Hon Yuen
Published 2010

Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay

by Tseng, Ampere A., Ng, Chi Yung, Chen, Tupei, Tse, Man Siu, Fung, Stevenson Hon Yuen, Lim, Vanissa Sei Wei
Published 2010

Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

by Tseng, Ampere A., Liu, Yang, Chen, Tupei, Ng, Chi Yung, Ding, Liang, Tse, Man Siu, Fung, Stevenson Hon Yuen
Published 2010

Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides

by Chen, Q., Zhao, P., Tseng, Ampere A., Ng, Chi Yung, Chen, Tupei, Ding, Liang, Liu, Yang, Fung, Stevenson Hon Yuen
Published 2010