Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located...

Full description

Saved in:
Bibliographic Details
Main Authors: Liu, Yang, Chen, Tupei, Ding, Liang, Yang, Ming, Wong, Jen It, Ng, Chi Yung, Yu, Siu Fung, Li, Zeng Xiang, Yuen, Chau, Zhu, Fu Rong, Fung, Stevenson Hon Yuen, Tan, M. C.
Format: Article
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/91942
http://hdl.handle.net/10220/6425
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English