Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located...
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Main Authors: | , , , , , , , , , , , |
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格式: | Article |
語言: | English |
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2010
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主題: | |
在線閱讀: | https://hdl.handle.net/10356/91942 http://hdl.handle.net/10220/6425 |
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機構: | Nanyang Technological University |
語言: | English |