Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

• Main Authors: Liu, Yang, Chen, Tupei, Ding, Liang, Yang, Ming, Wong, Jen It, Ng, Chi Yung, Yu, Siu Fung, Li, Zeng Xiang, Yuen, Chau, Zhu, Fu Rong, Fung, Stevenson Hon Yuen, Tan, M. C.
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/91942; http://hdl.handle.net/10220/6425
• Institution: Nanyang Technological University

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.