A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation

• المؤلفون الرئيسيون: Ding, Liang, Chen, Tupei, Liu, Yang, Liu, Yu Chan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91068; http://hdl.handle.net/10220/6938

Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The dielect...