A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation

Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The dielect...

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Main Authors: Ding, Liang, Chen, Tupei, Liu, Yang, Liu, Yu Chan
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2011
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Online Access:https://hdl.handle.net/10356/91068
http://hdl.handle.net/10220/6938
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-910682020-03-07T13:24:46Z A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation Ding, Liang Chen, Tupei Liu, Yang Liu, Yu Chan School of Electrical and Electronic Engineering Silicon photonics III A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The dielectric functions of the isolated nc-Si and densely-stacked nc-Si layer embedded in SiO2 have been determined with spectroscopic ellipsometry (SE) in the photon energy range of 1.1-5 eV. The dielectric functions of these two different Si nanostructures were successfully extracted from the SE fitting based on a multi-layer fitting model that takes into account the distribution of nc-Si in SiO2 and a five phase model (i.e., air/SiO2 layer/densely-stacked nc-Si layer/SiO2 layer/Si), respectively. The dielectric spectra of isolated nc-Si distributed in SiO2 present a two-peak structure, while the dielectric spectra of densely-stacked nc-Si layer show a single broad peak, being similar to that of amorphous Si. The dielectric functions of these two Si nanostructures both show significant suppressions as compared with bulk crystalline Si. However, it has been observed that the densely stacked nc-Si layer exhibits a more significant suppression in the dielectric spectra than the isolated nc-Si dispersedly embedded in SiO2. This is probably related to the two factors: (i) the nc-Si size (~3 nm) of the densely stacked nc-Si layer is smaller than that (~4.5 nm) of the isolated nc-Si embedded in SiO2 matrix, and (ii) the densely stacked nc-Si layer has an amorphous phase. Published version 2011-07-28T00:55:38Z 2019-12-06T17:59:08Z 2011-07-28T00:55:38Z 2019-12-06T17:59:08Z 2008 2008 Conference Paper Ding, L., Chen, T., Liu, Y., & Liu, Y. C. (2008). A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation. Silicon photonics III. https://hdl.handle.net/10356/91068 http://hdl.handle.net/10220/6938 10.1117/12.762600 en © 2008 SPIE--The International Society for Optical Engineering. This paper was published in Proc. SPIE 6898 and is made available as an electronic reprint (preprint) with permission of SPIE--The International Society for Optical Engineering. The paper can be found at the following official DOI: http://dx.doi.org/10.1117/12.762600.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Ding, Liang
Chen, Tupei
Liu, Yang
Liu, Yu Chan
A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation
description Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The dielectric functions of the isolated nc-Si and densely-stacked nc-Si layer embedded in SiO2 have been determined with spectroscopic ellipsometry (SE) in the photon energy range of 1.1-5 eV. The dielectric functions of these two different Si nanostructures were successfully extracted from the SE fitting based on a multi-layer fitting model that takes into account the distribution of nc-Si in SiO2 and a five phase model (i.e., air/SiO2 layer/densely-stacked nc-Si layer/SiO2 layer/Si), respectively. The dielectric spectra of isolated nc-Si distributed in SiO2 present a two-peak structure, while the dielectric spectra of densely-stacked nc-Si layer show a single broad peak, being similar to that of amorphous Si. The dielectric functions of these two Si nanostructures both show significant suppressions as compared with bulk crystalline Si. However, it has been observed that the densely stacked nc-Si layer exhibits a more significant suppression in the dielectric spectra than the isolated nc-Si dispersedly embedded in SiO2. This is probably related to the two factors: (i) the nc-Si size (~3 nm) of the densely stacked nc-Si layer is smaller than that (~4.5 nm) of the isolated nc-Si embedded in SiO2 matrix, and (ii) the densely stacked nc-Si layer has an amorphous phase.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ding, Liang
Chen, Tupei
Liu, Yang
Liu, Yu Chan
format Conference or Workshop Item
author Ding, Liang
Chen, Tupei
Liu, Yang
Liu, Yu Chan
author_sort Ding, Liang
title A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation
title_short A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation
title_full A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation
title_fullStr A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation
title_full_unstemmed A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation
title_sort comparative study on the dielectric functions of isolated si nanocrystals and densely-stacked si nanocrystal layer embedded in sio2 synthesized with si ion implantation
publishDate 2011
url https://hdl.handle.net/10356/91068
http://hdl.handle.net/10220/6938
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