Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications

Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access me...

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Bibliographic Details
Main Author: Liu, Zhi Qing.
Other Authors: Zhu, Weiguang
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/19645
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Institution: Nanyang Technological University
Language: English