Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications

Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications

Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access me...

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Main Author: Liu, Zhi Qing.
Other Authors: Zhu, Weiguang
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/19645
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-19645
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spelling sg-ntu-dr.10356-196452023-07-04T15:26:35Z Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications Liu, Zhi Qing. Zhu, Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access memory (DRAM) applications. Master of Engineering 2009-12-14T06:19:38Z 2009-12-14T06:19:38Z 1996 1996 Thesis http://hdl.handle.net/10356/19645 en NANYANG TECHNOLOGICAL UNIVERSITY 164 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Liu, Zhi Qing.
Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications
description Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access memory (DRAM) applications.
author2 Zhu, Weiguang
author_facet Zhu, Weiguang
Liu, Zhi Qing.
format Theses and Dissertations
author Liu, Zhi Qing.
author_sort Liu, Zhi Qing.
title Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications
title_short Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications
title_full Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications
title_fullStr Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications
title_full_unstemmed Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications
title_sort ferroelectric lead zirconate titanate (pzt) thin films by metallo-organic decomposition (mod) technology for memory applications
publishDate 2009
url http://hdl.handle.net/10356/19645
_version_ 1772828929371930624

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