Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications

Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications

164 p.

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Bibliographic Details
Main Author: Zhu, Wei Guang.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2011
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/46615
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Institution: Nanyang Technological University

Internet

http://hdl.handle.net/10356/46615

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