Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications

164 p.

Saved in:

Bibliographic Details
Main Author:	Zhu, Wei Guang.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2011
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/46615
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-46615
record_format	dspace
spelling	sg-ntu-dr.10356-466152023-03-04T03:21:52Z Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications Zhu, Wei Guang. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 164 p. Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access memory (DRAM) applications. RP 24/93 2011-12-21T03:07:26Z 2011-12-21T03:07:26Z 1995 1995 Research Report http://hdl.handle.net/10356/46615 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Zhu, Wei Guang. Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications
description	164 p.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Zhu, Wei Guang.
format	Research Report
author	Zhu, Wei Guang.
author_sort	Zhu, Wei Guang.
title	Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications
title_short	Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications
title_full	Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications
title_fullStr	Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications
title_full_unstemmed	Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications
title_sort	ferroelectric lead zirconate titanate (pzt) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and dram applications
publishDate	2011
url	http://hdl.handle.net/10356/46615
_version_	1759855203636477952

Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications

Similar Items