Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage

• Main Authors: Gao, Bin, Yu, Hongyu, Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Z. R., Yu, B.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97328; http://hdl.handle.net/10220/11838
• Institution: Nanyang Technological University

A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy.