Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect
We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradatio...
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Main Authors: | , , , , , , , , , |
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Other Authors: | |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/102380 http://hdl.handle.net/10220/16380 |
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Institution: | Nanyang Technological University |
Language: | English |