Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

• Main Authors: Gao, Bin, Yu, Hongyu, Lu, Y., Chen, B., Fang, Z., Fu, Y. H., Yang, J. Q., Liu, L. F., Liu, X. Y., Kang, J. F.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/102380; http://hdl.handle.net/10220/16380
• Institution: Nanyang Technological University

We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradatio...