APA引文

Gao, B., Yu, H., Lu, Y., Chen, B., Fang, Z., Fu, Y. H., . . . Engineering, S. o. E. a. E. (2013). Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect.

Chicago Style Citation

Gao, Bin, et al. Improvement of Endurance Degradation for Oxide Based Resistive Switching Memory Devices Correlated With Oxygen Vacancy Accumulation Effect. 2013.

MLA引文

Gao, Bin, et al. Improvement of Endurance Degradation for Oxide Based Resistive Switching Memory Devices Correlated With Oxygen Vacancy Accumulation Effect. 2013.