Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress

• Main Authors: Raghavan, Nagarajan, Padovani, Andrea, Li, Xiang, Bosman, Michel, Wu, Xing, Lip Lo, Vui, Larcher, Luca, Leong Pey, Kin
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101175; http://hdl.handle.net/10220/18307
• Institution: Nanyang Technological University

Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor f...