Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress

Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor f...

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Bibliographic Details
Main Authors: Raghavan, Nagarajan, Padovani, Andrea, Li, Xiang, Bosman, Michel, Wu, Xing, Lip Lo, Vui, Larcher, Luca, Leong Pey, Kin
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/101175
http://hdl.handle.net/10220/18307
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Institution: Nanyang Technological University
Language: English

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