Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide

10.1063/1.2388246

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Bibliographic Details
Main Authors: Zhu, M., Tung, C.-H., Yeo, Y.-C.
Other Authors: NUS NANOSCIENCE & NANOTECH INITIATIVE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/50861
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Institution: National University of Singapore