Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
10.1063/1.2388246
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sg-nus-scholar.10635-508612023-10-29T21:44:30Z Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide Zhu, M. Tung, C.-H. Yeo, Y.-C. NUS NANOSCIENCE & NANOTECH INITIATIVE ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2388246 Applied Physics Letters 89 20 - APPLA 2014-04-24T07:19:32Z 2014-04-24T07:19:32Z 2006 Article Zhu, M., Tung, C.-H., Yeo, Y.-C. (2006). Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide. Applied Physics Letters 89 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2388246 00036951 http://scholarbank.nus.edu.sg/handle/10635/50861 000242100200071 Scopus |
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10.1063/1.2388246 |
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NUS NANOSCIENCE & NANOTECH INITIATIVE |
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NUS NANOSCIENCE & NANOTECH INITIATIVE Zhu, M. Tung, C.-H. Yeo, Y.-C. |
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Zhu, M. Tung, C.-H. Yeo, Y.-C. |
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Zhu, M. Tung, C.-H. Yeo, Y.-C. Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide |
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Zhu, M. |
title |
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide |
title_short |
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide |
title_full |
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide |
title_fullStr |
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide |
title_full_unstemmed |
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide |
title_sort |
aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/50861 |
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