Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide

10.1063/1.2388246

Saved in:
Bibliographic Details
Main Authors: Zhu, M., Tung, C.-H., Yeo, Y.-C.
Other Authors: NUS NANOSCIENCE & NANOTECH INITIATIVE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/50861
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-50861
record_format dspace
spelling sg-nus-scholar.10635-508612023-10-29T21:44:30Z Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide Zhu, M. Tung, C.-H. Yeo, Y.-C. NUS NANOSCIENCE & NANOTECH INITIATIVE ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2388246 Applied Physics Letters 89 20 - APPLA 2014-04-24T07:19:32Z 2014-04-24T07:19:32Z 2006 Article Zhu, M., Tung, C.-H., Yeo, Y.-C. (2006). Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide. Applied Physics Letters 89 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2388246 00036951 http://scholarbank.nus.edu.sg/handle/10635/50861 000242100200071 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.2388246
author2 NUS NANOSCIENCE & NANOTECH INITIATIVE
author_facet NUS NANOSCIENCE & NANOTECH INITIATIVE
Zhu, M.
Tung, C.-H.
Yeo, Y.-C.
format Article
author Zhu, M.
Tung, C.-H.
Yeo, Y.-C.
spellingShingle Zhu, M.
Tung, C.-H.
Yeo, Y.-C.
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
author_sort Zhu, M.
title Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
title_short Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
title_full Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
title_fullStr Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
title_full_unstemmed Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
title_sort aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/50861
_version_ 1781411623946158080